Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. The transistor covers the frequency range 5.2 to 5.9 GHz with instantaneous response, and features 14 dB of gain and 43% efficiency at 1 millisecond/15% pulse conditions.
The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides excellent thermal dissipation, and measures 0.800 in. (20.32 mm) wide and 0.400 in. (10.16 mm) in length. It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is done with a chip and wire approach by expert certified assemblers.
This 50W transistor is an ideal solution for C-band pulsed radar system designs that require immediate full power and high gain.
Features:
- GaN on SiC HEMT Technology
- 50W Output Power
- Fully-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
- Negative Gate Voltage/Bias Sequencing
