Power Amplifiers Yield High Output Through 110 GHz

Feb. 24, 2017
Series of power amplifiers leverages advanced PHEMT MMICs and transistors .

Series of power amplifiers leverages advanced PHEMT MMICs and transistors which yield millimeter-wave saturated power as high as 38 dBm at 35.5 GHz and 15.5 dBm at 110 GHz.

 

Frequency ranges for AMP devices extend from 18 to 110 GHz with corresponding and standard waveguide or coaxial connector interfaces. The AMP Series of amplifiers offers internal bias circuitry that generates gate control voltages, provides proper voltage sequencing, and incorporates reverse voltage protection from a single positive external bias.

 

Broadband features of these amplifiers makes them ideal for a myriad of applications including transceivers, upconverters, EW, instrumentation, and radar systems.

Features:

  • yield millimeter-wave saturated power as high as 38 dBm at 35.5 GHz and 15.5 dBm at 110 GHz
  • frequency ranges extent from 18 through 110 GHz
  • internal bias circuitry generates gate control voltages