Step recovery diodes (SRDs) utilize controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. They offer low snap time through voltages ranging from 8 to 120 v dc. Capacitances at 6 v dc range from 0.2 to 3 pF.
SRDs are ideally suited for signal generation applications, including pulse generators and parametric amplifiers.
Features:
- Wide Selection of Tightend Capacitance Ranges
- Low Transition Times
- High Effciencies
