SLP7100 limiter diodes are processed with a high-resistivity epitaxial wafer (epi) that has thin intrinsic layers. These devices are 2 to 20 microns thick and can be gold doped to achieve specific performance goals. The SLP7100 limiter diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges.
Series SLP7100 diodes feature:
- a low capacitance and resistance
- a turn-on time as low as 5ns
- maximum input power ranging from +47 dBm to +66 dBm
- leakage output power from +19 dBm to +44 dBm
- typical insertion losses range from a low 0.10 dB to a maximum of 0.2 dB
